| PART |
Description |
Maker |
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| CY7C1021BNV33L-10ZXC CY7C1021BNV33L-15BAI CY7C1021 |
64K x 16 Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Static RAM 64K的16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万（64K的X 18）同步可猝发流水线式线式高性能静态内存）
|
International Business Machines, Corp.
|
| CY7C1021CV26-15ZE CY7C1021CV26 CY7C1021CV26-15ZET |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
1-Mbit (64K x 16) Static RAM
|
CYPRESS SEMICONDUCTOR CORP
CYPRESS[Cypress Semiconductor]
|
| CY7C1021B- CY7C1021B-15VC CY7C1021B-15ZC CY7C1021B |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1021CV33-8BAXC CY7C1021CV33-8ZXC CY7C1021CV33- |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1021B-15VXC CY7C1021B-15VXE CY7C1021B-15VXI CY |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 3.05X1.51X1.05 W/1 BTN ALMOND
FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
